Specifications
- Capacity256GB
- Form FactorM.2 2280
- InterfacePCIe 3.0
- PerformanceSequential Read/Write:
512GB- 256GB: up to 3500MB/s read, 2400MB/s write speeds
1TB-2TB: up to 3500MB/s read, 3000MB/s write speeds
Random Read/Write
512GB: up to 200K IOPs read, 256K IOPs write speeds
1TB: up to 300K IOPs read, 256K IOPs write speeds
2TB: up to 350K IOPs read, 256K IOPs write speeds - Total Bytes Written2TB:1000, 1TB: 500TB, 512GB: 250TB, 256GB: 125TB
- Operating Temperature0°C to 70°C (32°F to 158°F)
- Storage Temperature-40°C to 85°C (-40°F to 185°F)
- Dimension (L x W x H)80 mm x 22 mm x 2.25 mm / 3.15” x 0.87” x 0.09”
- Shock Resistant1500 G, duration 0.5ms, Half Sine Wave
- Vibration Resistant10~2000Hz, 1.5mm, 20 G, 1 Oct/min, 30min/axis(X,Y,Z)
- DWPD1TB: 0.44, 512GB: 0.44, 256GB: 0.44
- NAND flash3D TLC
- MTBF1,500,000 Hours








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